? semiconductor components industries, llc, 2007 july, 2007 - rev. 3 1 publication order number: ntmfs4707n/d ntmfs4707n power mosfet 30 v, 17 a, single n-channel, soic-8 flat lead features ? fast switching times ? low gate charge ? low r ds(on) ? low inductance soic-8 package ? these are pb-free devices applications ? notebooks, graphics cards ? dc-dc converters ? synchronous rectification maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain-to-source voltage v dss 30 v gate-to-source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 10.2 a t a = 85 c 7.4 t 10 s t a = 25 c 17 power dissipation (note 1) steady state t a = 25 c p d 2.3 w t 10 s 6.25 continuous drain current (note 2) steady state t a = 25 c i d 6.9 a t a = 85 c 4.9 power dissipation (note 2) t a = 25 c p d 1.0 w pulsed drain current t p 10 s i dm 51 a operating junction and storage temperature t j , t stg -55 to 150 c source current (body diode) i s 6.25 a single pulse drain-to-source avalanche energy (v dd = 25 v, v gs = 10 v, i pk = 7.0 a, l = 10 mh, r g = 25 ) e as 245 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance maximum ratings parameter symbol value unit junction-to-ambient C steady state (note 1) r ja 55 c/w junction-to-ambient C t 10 s (note 1) r ja 20 junction-to-ambient C steady state (note 2) r ja 122.5 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface-mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). 2. surface-mounted on fr4 board using the minimum recommended pad size (cu area = 0.412 in sq). http://onsemi.com device package shipping ? ordering information ntmfs4707nt1g soic-8 fl (pb-free) 1500/t ape & reel soic-8 flat lead case 488aa style 1 marking diagram & pin assignment 1 4707n = specific device code a = assembly location y = year ww = work week = pb-free package 4707n ayww s n-channel d s g 30 v 13.5 m @ 4.5 v 10 m @ 10 v r ds(on) typ 17 a i d max v (br)dss s s g d d d d NTMFS4707NT3G 5000/t ape & reel soic-8 fl (pb-free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. (note: microdot may be in either location)
ntmfs4707n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain-to-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain-to-source breakdown voltage temperature coefficient v (br)dss /t j 6.5 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1.0 a t j = 125 c 50 gate-to-source leakage current i gss v ds = 0 v, v gs = 20v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.0 2.5 v negative threshold temperature coefficient v gs(th) /t j 5.0 mv/ c drain-to-source on resistance r ds(on) v gs = 10 v, i d = 10 a 10 13 m v gs = 4.5 v, i d = 8.0 a 13.5 17 forward transconductance g fs v ds = 15 v, i d = 10 a 20 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 24 v 735 pf output capacitance c oss 295 reverse transfer capacitance c rss 80 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 10 a 7.5 15 nc threshold gate charge q g(th) 1.1 gate-to-source charge q gs 2.0 gate-to-drain charge q gd 3.6 gate resistance r g 2.4 switching characteristics (note 4) turn-on delay time t d(on) v gs = 10 v, v dd = 15 v, i d = 1.0 a, r g = 3.0 6.0 ns rise time t r 5.0 turn-off delay time t d(off) 19 fall time t f 11 drain-source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 6.25 a t j = 25 c 0.79 1.0 v t j = 125 c 0.59 reverse recovery time t rr v gs = 0 v, d is /d t = 100 a/ s, i s = 6.25 a 26 ns charge time t a 14 discharge time t b 12 reverse recovery charge q rr 19 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
ntmfs4707n http://onsemi.com 3 typical characterizations t j = 125 c 0 15 3 1 v ds , drain-to-source voltage (volts) i d, drain current (amps) 10 0 figure 1. on-region characteristics 23 24 18 6 0 0 figure 2. transfer characteristics v gs , gate-to-source voltage (volts) 0.005 10 20 0.010 0 figure 3. on-resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain-to-source resistance ( ) i d, drain current (amps) figure 4. on-resistance vs. drain current and gate voltage i d, drain current (amps) -50 0 -25 25 1.6 1.2 0.8 50 150 figure 5. on-resistance variation with temperature t j , junction temperature ( c) t j = 25 c 515 t j = -55 c t j = 25 c 75 t j = 25 c i d = 17 a v gs = 10 v r ds(on), drain-to-source resistance (normalized) 2 t j = 25 c r ds(on), drain-to-source resistance ( ) 2.0 v gs = 10 v 0 100 25 figure 6. drain-to-source leakage current vs. voltage v ds , drain-to-source voltage (volts) 15 v gs = 0 v i dss , leakage (na) t j = 150 c 2.4 v v gs = 4.5 v 1000 10000 100000 5 4 v v ds 10 v 0.020 10 20 4.5 v 5 3.4 v 12 4 25 30 30 30 20 2.6 v v gs = 10 v 36 0.015 125 100 0 4 5 v gs = 10 v t j = 125 c t j = -55 c 0.006 12 20 0.010 0.002 816 0 0.018 24 0.014 5 t j = 125 c 25 3 v 1 30 2.8 v 3.8 v 1.4 1.0 0.6 1.8
ntmfs4707n http://onsemi.com 4 typical characterizations figure 7. capacitance variation figure 8. gate-to-source and drain-to-source voltage vs. total charge 1 3 0 v sd , source-to-drain voltage (volts) figure 9. resistive switching time variation vs. gate resistance i s , source current (amps) v gs = 0 v t j = 25 c 0.4 0 18 figure 10. diode forward voltage vs. current 0.8 0.6 12 9 figure 11. maximum rated forward biased safe operating area 0.1 v ds , drain-to-source voltage (volts) 0.1 1 i d , drain current (amps) r ds(on) limit thermal limit package limit v gs = 20 v single pulse t c = 25 c 10 0.01 dc 1 100 100 10 10 ms 1 ms 100 s gate-to-source or drain-to-source voltage (volts) c, capacitance (pf) 1600 10 0 5 10 5 t j = 25 c c iss c oss 15 20 25 0 c rss v ds = 0 v v gs = 0 v v ds v gs v gs , gate-to-source voltage (v) 0 2 0 q g , total gate charge (nc) 5 4 i d = 10 a t j = 25 c v gs = 4.5 v q gs r g , gate resistance (ohms) 1 10 100 100 10 t, time (ns) v dd = 15 v i d = 1 a v gs = 4.5 v t r t d(off) q gd q t 1 6 150 50 0 t j , starting junction temperature ( c) eas, single pulse drain-to-source avalanche energy (mj) i d = 7 a 350 100 25 300 figure 12. maximum avalanche energy vs. starting junction temperature 125 75 200 150 100 3 1 10 246 8 0.2 10 s 250 50 200 1400 1200 1000 800 600 400 c iss c rss t f t d(on) 15 1000
ntmfs4707n http://onsemi.com 5 3.package dimensions dfn6 5x6, 1.27p (so8 fl) case 488aa-01 issue c style 1: pin 1. source 2. source 3. source 4. gate 5. drain 6. drain m 3.00 3.40 0 --- 3.80 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 5 6 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 --- b 0.33 0.41 c 0.23 0.28 d 5.15 bsc d1 4.50 4.90 d2 3.50 --- e 6.15 bsc e1 5.50 5.80 e2 3.45 --- e 1.27 bsc g 0.51 0.61 k 0.51 --- l 0.51 0.61 l1 0.05 0.17 a 0.10 c 0.10 c detail a 14 6 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 e 3 x c 4 x c seating plane 5 max 1.10 0.05 0.51 0.33 5.10 4.22 6.10 4.30 0.71 --- 0.71 0.20 m *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 0.475 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 3x 4x 4x on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ntmfs4707n/d publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 literature fulfillment : ?literature distribution center for on semiconductor ?p .o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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